Method of making atomic integrated circuit device

Details Method of making atomic integrated circuit device Method of making atomic integrated circuit device

2006-10-10

2006-10-10

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C438S022000, C438S024000, C438S027000, C438S421000, C257S009000, C257S140000, C257S146000, C257S496000, C257S510000

Reexamination Certificate

active

07118942

ABSTRACT:
A method of mass-producing a solid state device comprises providing an atomically smooth, solid state material layer no more than 40 Angstroms thick. This layer is uniformly and defect-freely bonded onto a substrate to provide an acceptable device yield.

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