Method of making and structure of SRAM storage cell with N chann

Details Method of making and structure of SRAM storage cell with N chann Method of making and structure of SRAM storage cell with N chann

1996-12-27

1999-02-09

Mai, Son

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, 257903, 257904, G11C 1100

Patent

active

058703306

ABSTRACT:
An SRAM cell includes a pair of N channel transistors acting as inverting circuits, a pair of N channel transistors which perform the control function for the cell, and a pair of N channel thin film transistors in depletion mode with gate and source shorted to provide load devices for the N channel inverter transistors of the SRAM cell.

REFERENCES:
patent: 4797717 (1989-01-01), Ishibashi et al.
patent: 5135888 (1992-08-01), Chan et al.
patent: 5159416 (1992-10-01), Kudoh
patent: 5187114 (1993-02-01), Chan et al.
patent: 5196233 (1993-03-01), Chan et al.
patent: 5521861 (1996-05-01), Lee
patent: 5526304 (1996-06-01), Kawamura
patent: 5535155 (1996-07-01), Abe
patent: 5635731 (1997-06-01), Ashida

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