Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
2000-01-03
2000-11-21
Smith, Matthew
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438958, H01L 2131, H01L 21469
Patent
active
061502863
ABSTRACT:
Various methods of fabricating a circuit structure utilizing silicon nitride are provided. In one aspect, a method of fabricating a circuit structure is provided that includes forming a silicon nitride film on a silicon surface, annealing the silicon nitride film in an ammonia ambient and annealing the silicon nitride film in a nitrous oxide ambient to form a thin oxide layer at an interface between the silicon nitride film and the silicon surface. The process of the present invention enables the manufacture of thin silicon nitride films with highly uniform morphology for use as gate dielectrics or other purposes. The thin oxide film is self-limiting in thickness and improves differential mechanical stresses.
REFERENCES:
patent: 5258333 (1993-11-01), Shappir et al.
patent: 5516707 (1996-05-01), Loh et al.
patent: 5559368 (1996-09-01), Hu et al.
patent: 5578848 (1996-11-01), Kwong et al.
patent: 5596218 (1997-01-01), Soleimani et al.
patent: 5939763 (1999-08-01), Hao et al.
patent: 6045954 (2000-04-01), Dai et al.
Stanley Wolf and Richard N. Tauber; Silicon Processing for the VLSI Era; vol. 1: Process Technology; pp. 210-226; 1986.
Stanley Wolf and Richard N. Tauber; Silicon Processing for the VLSI Era; vol. 2: Process Integration; pp. 182-188, 222-235, 318, 332-333, 354-361 and 419-439; 1990.
Stanley Wolf and Richard N. Tauber; Silicon Processing for the VLSI Era; vol. 3: The Submicron MOSFET; pp. 367-407 and 648-660; 1995.
Gardner Mark I.
Song Shengnian
Sun Sey-Ping
Advanced Micro Devices , Inc.
Honeycutt Timothy M.
Lee Calvin
Smith Matthew
LandOfFree
Method of making an ultra thin silicon nitride film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making an ultra thin silicon nitride film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making an ultra thin silicon nitride film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1256956