Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-09-19
1998-06-30
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438405, 438981, H01L 21786
Patent
active
057733260
ABSTRACT:
An SOI structure (20) includes a semiconductor layer (15) formed on an insulating substrate (12). The semiconductor layer (15) is partitioned into an ESD protection portion (32) and a circuitry portion (34). A portion of the semiconductor layer (15) in the ESD protection portion (32) and a different portion of the semiconductor layer (15) in the circuitry portion (34) are differentially thinned. A device (60) which implements the desired circuit functions of the SOI structure (20) is fabricated in the circuitry portion (34). An ESD protection device (40) is fabricated in the ESD protection portion (32). The thick semiconductor layer (15) in the ESD protection portion (32) serves to distribute the ESD current and heat over a large area, thereby improving the ability of the SOI structure (20) to withstand an ESD event.
REFERENCES:
patent: 4423431 (1983-12-01), Sasaki
patent: 4753896 (1988-06-01), Matloubian
patent: 4879585 (1989-11-01), Usami
patent: 4889829 (1989-12-01), Kawai
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5145802 (1992-09-01), Tyson et al.
patent: 5364800 (1994-11-01), Joyner
patent: 5399507 (1995-03-01), Sun
patent: 5439836 (1995-08-01), Giffard
patent: 5612246 (1997-03-01), Ahn
Mansun, Chan, et al., "SOI/Bulk Hybrid Technology on SIMOX Wafers for High Performance Circuits with Good ESC Immunity", pub. by IEEE Electron Device Ltrs., vol. 16, No. 1, Jan. 1995, pp. 11-13.
S.A. Abbas, et al., "Silicon-on-Sapphire-on-Silicon Integrated Circuit Structure", pub. by IBM Technical Discl. Bulletin, vol. 16, No. 3, Aug. 1973, pp. 1027-1029.
Jean-Pierre Colinge, "Silicon-on-Insulator Technology: Materials to VLSI", Kluwer Academic Publishers 1991, Chapter 4:SOI CMOS Technology, pp. 102-106.
Stanley Wolf, "Silicon Processing for the VLSI Era", Lattice Press in California, vol. 2: Process Integration, 4 pgs., 1990, pp. 72-75.
Gilbert et al., Application #08/384,177 filed Feb. 6, 1995.
Smith et al., Application #08/625,861 filed Apr. 1, 1996.
Gilbert Percy V.
Jamison Stephen G.
Miller James W.
Tsui Paul G. Y.
Chaudhari Chandra
Meyer George R.
Motorola Inc.
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