Method of making an interconnect using a tungsten hard mask

Details Method of making an interconnect using a tungsten hard mask Method of making an interconnect using a tungsten hard mask

1998-04-20

2000-07-11

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438736, 438737, 438742, 438709, 438720, H01L 213065

Patent

active

060872691

ABSTRACT:
An interconnect layer is fabricated using a tungsten hard mask by forming a tungsten based layer over an aluminum based layer. A photoresist layer is deposited over the tungsten based layer and patterned. The tungsten based layer is patterned by applying a fluorine-based etchant using the photoresist layer as an etch mask. Then the aluminum based layer is patterned by applying a chlorine based etchant using the tungsten based layer as an etch mask.

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Woo, Michel et al., "Tungsten Cap Metallization for 0.5 um Via Fill Technology," J. Electrochem. Soc., vol. 142, No. 11, pp. 3893-3895 Jan. 1995.
Woo, Michel et al., "Tungsten Cap Metallization for 0.5 um Via Fill Technology, " J. Electrochem. Soc., vol. 142, No. 11, Nov. 1995, pp. 3893-3895.

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