Method of making an integrated electromechanical switch and...

Details Method of making an integrated electromechanical switch and... Method of making an integrated electromechanical switch and...

2005-11-29

2005-11-29

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S052000, C257SE21215

Reexamination Certificate

active

06969630

ABSTRACT:
A monolithically integrated, electromechanical microwave switch, capable of handling signals from DC to millimeter-wave frequencies, and an integrated electromechanical tunable capacitor are described. Both electromechanical devices include movable beams actuated either by thermo-mechanical or by electrostatic forces. The devices are fabricated directly on finished silicon-based integrated circuit wafers, such as CMOS, BiCMOS or bipolar wafers. The movable beams are formed by selectively removing the supporting silicon underneath the thin films available in a silicon-based integrated circuit technology, which incorporates at least one polysilicon layer and two metallization layers. A cavity and a thick, low-loss metallization are used to form an electrode above the movable beam. A thick mechanical support layer is formed on regions where the cavity is located, or substrate is bulk-micro-machined, i.e., etched.

REFERENCES:
patent: 6167761 (2001-01-01), Hanzawa et al.
patent: 6418006 (2002-07-01), Liu et al.

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