Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2005-12-09
2008-09-23
Norton, Nadine (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
C438S706000, C438S708000, C438S712000, C438S717000, C165S080300, C165S168000, C361S676000, C361S689000, C361S699000, C257S717000, C257S706000
Reexamination Certificate
active
07427566
ABSTRACT:
A method is provided. The method includes forming a conductive layer on an inner surface of a substrate and providing a sacrificial layer over the conductive layer. The method includes forming a plurality of channels in the sacrificial layer and plating the sacrificial layer to substantially fill the plurality of channels with a plating material comprising conducting material. The method also includes etching the sacrificial layer to form a conducting structure having fins where conducting material remains separated by microchannels where the sacrificial layer is etched.
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Balch Ernest Wayne
Durocher Kevin Matthew
Goodwin Stacey Joy
Kapusta Christopher James
Angadi Maki
General Electric Company
Norton Nadine
Yoder Fletcher
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