Method of making an antifuse cell with tungsten silicide electro

Details Method of making an antifuse cell with tungsten silicide electro Method of making an antifuse cell with tungsten silicide electro

1996-04-01

1997-08-26

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

257 50, 257530, 438600, 438954, 438533, H01L 2170

Patent

active

056610718

ABSTRACT:
An improved antifuse design has been achieved by using a structure including a region of heavily doped N type silicon coated with a layer of ONO (oxide-nitride-oxide). Top contact to the ONO is made through a layer of tungsten silicide sandwiched between two layers of N type polysilicon. A cost effective method for manufacturing said antifuse structure is described.

REFERENCES:
patent: 4796074 (1989-01-01), Roesner
patent: 4943538 (1990-07-01), Mohsen et al.
patent: 5057451 (1991-10-01), McCollum
patent: 5087958 (1992-02-01), Chen et al.
patent: 5110754 (1992-05-01), Lowrey et al.
patent: 5219782 (1993-06-01), Liu et al.
patent: 5242851 (1993-09-01), Choi
patent: 5282158 (1994-01-01), Lee
patent: 5322812 (1994-06-01), Dixit et al.
patent: 5324681 (1994-06-01), Lowrey et al.
patent: 5350710 (1994-09-01), Hong et al.
patent: 5508220 (1996-04-01), Eltoukhy et al.
Wolf et al., Silicon Processing For The VLSI Era, Vol. I, Lattice Press, 1986, pp. 384-388.
Chang et al, "Conductive Channel in ONO Formed by Controlled Dielectric Breakdown" in 1992 Symposium on VLSI Technology Digest, pp. 20-21.

Affiliated with

Also associated with

Rating

Method of making an antifuse cell with tungsten silicide electro does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making an antifuse cell with tungsten silicide electro, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making an antifuse cell with tungsten silicide electro will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1987961