Method of making an amorphous surface for a gate electrode durin

Details Method of making an amorphous surface for a gate electrode durin Method of making an amorphous surface for a gate electrode durin

1998-01-28

2000-01-11

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

257 52, 257338, H01L 2144, H01L 2976

Patent

active

060135778

ABSTRACT:
To prevent channelling of gate impurities into channel region or gate insulation film without restricting sidewall material of the gate electrodes, a fabrication method of the invention of semiconductor devices comprises a first ion injection step for making amorphous a surface region (11) of a poly-silicon layer (7) for a gate electrode configured on a semiconductor substrate (1) by injecting ions selectively into the surface region, and a second ion injection step, performed after the first ion injection step without inserting any process needing a high temperature of the semiconductor substrate, for injecting impurities into the gate electrode.

REFERENCES:
patent: 4697333 (1987-10-01), Nakahara
patent: 4728619 (1988-03-01), Pfiester et al.
patent: 5036019 (1991-07-01), Yamane et al.
patent: 5541131 (1996-07-01), Yoo et al.

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