Method of making an aluminum containing interconnect without har

Details Method of making an aluminum containing interconnect without har Method of making an aluminum containing interconnect without har

1992-10-19

1996-11-26

Thomas, Tom

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

H01L 21306

Patent

active

055781632

ABSTRACT:
A method for manufacturing a semiconductor device, includes (a) dry-etching an aluminum-containing interconnecting layer, which is formed on a wafer, using reactive gas containing chlorine and/or chloride; (b) converting reactive gas, which contains a compound having at least a hydrogen atom, into a plasma at a temperature of 20.degree. to 150.degree. C. and removing remaining chlorine by activated hydrogen; and (c) converting oxygen-containing reactive gas into a plasma at a temperature of 20.degree. to 150.degree. C. and removing a resist layer chiefly by ashing. If the temperatures in the steps (b) and (c) are set to be low, there would be no obstacle in removing a sidewall protection layer formed by etching the aluminum-containing interconnecting layer.

REFERENCES:
patent: 4370196 (1983-01-01), Vossen, Jr. et al.
patent: 4372807 (1983-02-01), Vossen, Jr. et al.
patent: 4986877 (1991-01-01), Tachi et al.
patent: 5045150 (1991-09-01), Cleeves et al.
patent: 5106471 (1992-04-01), Galvin et al.
patent: 5110408 (1992-05-01), Fuji et al.
patent: 5174816 (1992-12-01), Aoyama et al.
patent: 5200031 (1993-04-01), Latchford
patent: 5221424 (1993-06-01), Rhoades
S. K. Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, New York, 1983, pp,. 499-503.
S. Wolf et al., Silicon Processing for the VLSI Era; vol. 1, Lattice Press, Sunset Beach, CA, 1986, pp. 559-565.
Japanese Journal of Applied Physics, vol. 19, No. 7, Jul. 1980, pp. L405-L408 "Undercutting Phenomena In Al Plasma Etching".

Affiliated with

Also associated with

Rating

Method of making an aluminum containing interconnect without har does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making an aluminum containing interconnect without har, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making an aluminum containing interconnect without har will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1970302