Method of making Alpha-Ta thin films

Details Method of making Alpha-Ta thin films Method of making Alpha-Ta thin films

1992-07-09

1993-06-22

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419217, 20419221, C23C 1434

Patent

active

052214494

ABSTRACT:
The present invention relates generally to a structure and a method of making Alpha-Ta films, and more particularly, to a structure and a method of making Alpha-Ta in thin films. A seed layer of Ta reactively sputtered in a nitrogen containing environment is grown on the substrate, and using this seed layer of Ta(N) layers of Alpha-Ta are then formed.

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Pearson's Handbook of Crystallographic Data for Intermetallic Phases vol. 3, American Society for Metals, pp. 3218, 2791 and 2792.
Binary Alloy Phase Diagrams, Second Edition, American Society for Metals, Ta-N Phase Diagram, pp. 2703-2704.
R. Petrovic et al., "Electrical and Structural Properties at Tantalum Nitride Thin Films Deposited by Sputtering," Thin Solid Films, vol. 57, pp. 333-336 (1979).
L. I. Maissel, et al., "Handbook of Thin Film Technology," McGraw-Hill, Inc., pp. 18-12 to 18-13 (1970).
L. G. Feinstein, et al., "Factors Controlling the Structure of Sputtered Ta Films," Thin Solid Films, vol. 16, pp. 129-145 (1973).
N. Schwartz, et al., "Impurity Effects in the Nucleation of Alpha (bcc)-Tantalum or Beta-Tantalum Films," J. Electrochem. Soc.: Solid-State Science and Technology, vol. 124, No. 1, pp. 123-131 (Jan. 1977).

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