Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-02-08
1998-06-30
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438287, 438591, 438786, 148DIG114, H01L 21318
Patent
active
057733252
ABSTRACT:
A gate insulating film covering active layers of a insulated gate field effect semiconductor device utilizing a thin film silicon semiconductor comprises a thin film having the chemical formula SiO.sub.x N.sub.y. By making the concentration of N (nitrogen) high at the interface between the gate insulating film and the gate electrodes, it is possible to prevent the material composing the gate electrodes from being diffused in the gate insulating film. By making the concentration of N (nitrogen) high at the interface between the gate insulating film and the active layers, it is possible to prevent hydrogen ions and other ions from diffusing into the gate insulating film from the active layer.
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C.E. Morosanu et al., Thin Solid Films 88(4)(Apr. 1982)339 "Thermodynamic evaluation of CVD Si3N4 films prepared by nitridation of dichlorosilane".
Bowers Jr. Charles L.
Ferguson Gerald R.
Radomsky Leon
Semiconductor Energy Laboratory Co,. Ltd.
Smith Evan R.
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