Method of making a TFT having an ion plated silicon dioxide capp

Details Method of making a TFT having an ion plated silicon dioxide capp Method of making a TFT having an ion plated silicon dioxide capp

1996-10-29

2000-07-11

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438149, 438787, 438DIG902, H01L 2184, H01L 2156

Patent

active

060872764

ABSTRACT:
A method of making a polysilicon thin-film transistor is presented. Device characteristics are improved when a silicon dioxide capping layer is formed by an ion plating method.

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K. H. Guenther, et al., J.Vac. Sci. techno. A7(3)(1989) 1436 "Microstructure . . . by reactive ion plating", May 1989.
H. K. Pulker, J.Vac. Sci. Technol. A10(4)(1992)1669 "Ion plating as an industrial manufacturing method", Jul. 1992.
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Ching-Fa Yeh, Shyue-Shyh Lin, Chun-Lin Chen, and Yu-Chi Yang, entitled "Novel Technique for SiO.sub.2 Formed by Liquid-Phase Deposition for Low-Temperature Processed Polysilicon TFT," IEEE Electron Device Letters, vol. 14, No. 8, pp. 403-405, 1993.
Ching-Fa Yeh, Tai-Ju Chen, Ching-Lin Fan and Jiann-Shiun Kao, entitled "Novel Gate Dielectric Films Formed by Ion Plating for Low-Temperature-Processed Polysilicon TFT's," IEEE Electron Device Letters, vol. 17, No. 9, pp. 421-424, Sep. 1996.

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