Method of making a structure for top surface gettering of metall

Details Method of making a structure for top surface gettering of metall Method of making a structure for top surface gettering of metall

1993-11-01

1996-09-17

Fourson, George

Fishing, trapping, and vermin destroying

437 12, 437 70, H01L 21322

Patent

active

055567932

ABSTRACT:
A method for gettering metallic impurities from a semiconductor substrate (25). A gettering structure is fabricated in inactive areas of a semiconductor chip (31). The gettering structure is manufactured by forming an oxide (30) having a bird's head structure contacting a heavily doped region (28). The combination creates precipitation nuclei to which the metallic impurities migrate. The metallic impurities are sequestered by the precipitation nuclei or trap sites and rendered incapable of degrading the electrical characteristics of a semiconductor device.

REFERENCES:
patent: 5220192 (1993-06-01), Owens et al.
patent: 5242854 (1993-09-01), Solheim et al.
Wolf, S., et al, Silicon Processing for the VLSI Era: vol. 1, Process Technology, Lattice Press, 1986, pp. 63-65.
Wolf, S., Silicon Processing for the VLSI Era: vol. 2, Process Integration, Lattice Press, 1990, pp. 20-24, 30 & 31.

Affiliated with

Also associated with

Rating

Method of making a structure for top surface gettering of metall does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a structure for top surface gettering of metall, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a structure for top surface gettering of metall will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-412719