Method of making a semimetal semiconductor contact

Details Method of making a semimetal semiconductor contact Method of making a semimetal semiconductor contact

1986-06-19

1988-07-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437109, 437110, 437193, 437196, 437174, 437967, 148DIG169, 148DIG122, 156610, 156612, 357 67, 357 71, 357 91, H01L 3106, H01L 21324

Patent

active

047554843

ABSTRACT:
A semiconductor contact system controls the boundary recombination velocity and optimizes the semiconductor transport phenomena and includes a microcrystalline layer of doped semiconductor microcrystals surrounded by a semiconductor oxide. The microcrystalline layer is acceptor and oxygen doped to provide unipolar hole transport and donor and oxygen doped to provided unipolar electron transport. The oxygen doping is implanted several atomic layers into the semiconductor to form a gradient between the semiconductor and microcrystalline layer to preserve the semiconductor monocrystalline lattice. The thickness of the microcrystalline film is adjusted to be thick enough to control the effective chemostatic potential terminating the semiconductor and thin enough to enhance the series microcrystalline film resistance.

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