Semiconductor device manufacturing: process – Voltage variable capacitance device manufacture
Patent
1999-07-26
2000-08-29
Monin, Jr., Donald L.
Semiconductor device manufacturing: process
Voltage variable capacitance device manufacture
438397, 438254, 438 52, 438745, 357312, 357313, 357419, H01L 2120
Patent
active
061107913
ABSTRACT:
A variable capacitor in a semiconductor device is described in which the capacitance is varied by the movement of a dielectric material in the space between the plates of the capacitor in response to an external stimulus. A method of making such a variable capacitor is also described in which the capacitor is built in a layered structure with the top layer including a portion of dielectric material extending into the space between the capacitor plates. After formation of the top layer, an intermediate layer is etched away to render the top layer flexible to facilitate movement of the dielectric material in the space between the capacitor plates.
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Communication dated Oct. 27, 1999 from the European Patent Office with attached European Search Report dated Oct. 20, 1999.
Fabbrizio Vito
Gozzini Giovanni
Gupta Bhusan
Kalnitsky Alexander
Kramer Alan
Galanthay Theodore E.
Jorgenson Lisa K.
Monin, Jr. Donald L.
Peralta Ginette
STMicroelectronics Inc.
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