Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Reexamination Certificate
2007-08-20
2009-02-17
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
C257SE21540
Reexamination Certificate
active
07491623
ABSTRACT:
The invention is directed to a structure and method of forming a structure having a sealed gate oxide layer. The structure includes a gate oxide layer formed on a substrate and a gate formed on the gate oxide layer. The structure further includes a material abutting walls of the gate and formed within an undercut underneath the gate to protect regions of the gate oxide layer exposed by the undercut. Source and drain regions are isolated from the gate by the material.
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Chen Xiaomeng
Jeng Shwu-Jen
Kim Byeong Y.
Nayfeh Hasan M.
Abate Joseph P.
Greenblum & Bernstein P.L.C.
International Business Machines - Corporation
Smith Matthew
Swanson Walter H.
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