Method of making a semiconductor pressure sensor

Details Method of making a semiconductor pressure sensor Method of making a semiconductor pressure sensor

1996-06-19

1999-03-02

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

H01L 2100

Patent

active

058770399

ABSTRACT:
A semiconductor pressure sensor comprises a silicon substrate having a surface orientation of substantially (110), a diaphragm formed from the substrate, strain gauges disposed on the diaphragm, and a base joined with the substrate. The diaphragm has an octagonal shape whose sides are orthogonal to axes <100>, <110>, and <111>, respectively. This sensor causes substantially no output error and no fluctuation between output characteristics of the strain gauges irrespective of a change in temperature.

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English translation of German Official Action dated May 15, 1996, issued in a counterpart foreign application.

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