Method of making a semiconductor laser with a self-sustained pul

Details Method of making a semiconductor laser with a self-sustained pul Method of making a semiconductor laser with a self-sustained pul

1994-12-28

1996-04-09

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437133, 437126, H01L 2120

Patent

active

055061702

ABSTRACT:
A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

REFERENCES:
patent: 4566171 (1986-01-01), Nelson et al.
patent: 4961197 (1990-10-01), Tanaka et al.
patent: 4984244 (1991-01-01), Yamamoto et al.
patent: 5053356 (1991-10-01), Mitsui et al.
patent: 5297158 (1994-03-01), Naitou et al.
"A New Self-Aligned Structure For (GaAl) As High Power Lasers With Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD" (Japanese Journal of Applied Physics, vol. 25, No. 6, Jun. 1986, pp. L498-L500).

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