Method of making a semiconductor device with changeable intercon

Details Method of making a semiconductor device with changeable intercon Method of making a semiconductor device with changeable intercon

1997-05-07

2000-05-30

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438658, 438662, 438686, 438687, 438688, 438659, H01L 2144

Patent

active

060690763

ABSTRACT:
A method of manufacturing a semiconductor device having the steps of: preparing a semiconductor device structure having an interconnection structure including a pair of electrically separated interconnections disposed near each other in one layer and a conductive pattern disposed near the pair of interconnections in the same layer; and applying light having a high intensity sufficient for melting and scattering conductive material of the conductive pattern to the conductive pattern and shorting the pair of interconnections with material formed by melting, scattering, and depositing the conductive material. This method provides a semiconductor device capable of easily connecting separated interconnections formed in the same layer.

REFERENCES:
patent: 4873413 (1989-10-01), Uesugi et al.
patent: 5633195 (1997-05-01), Guthrie et al.
patent: 5736434 (1998-04-01), Konuma et al.

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