Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-01-02
2007-01-02
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S585000, C438S705000, C438S945000, C438S947000, C257SE21026
Reexamination Certificate
active
10779007
ABSTRACT:
A semiconductor device is made by patterning a conductive layer for forming gates of transistors. The process for forming the gates has a step of patterning photoresist that overlies the conductive layer. The patterned photoresist is trimmed so that its width is reduced. Fluorine, preferably F2, is applied to the trimmed photoresist to increase its hardness and its selectivity to the conductive layer. Using the trimmed and fluorinated photoresist as a mask, the conductive layer is etched to form conductive features useful as gates. Transistors are formed in which the conductive pillars are gates. Other halogens, especially chlorine, may be substituted for the fluorine.
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Darlington William D.
Filipiak Stanley M.
Garza Cesar M.
Vasek James E.
Balconi-Lamic Michael
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Novacek Christy
Smith Zandra V.
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