Method of making a semiconductor device using a stressor

Details Method of making a semiconductor device using a stressor Method of making a semiconductor device using a stressor

2007-04-19

2010-06-01

Cao, Phat X (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S761000, C257SE21176

Reexamination Certificate

active

07727870

ABSTRACT:
A method for forming a semiconductor device includes providing a substrate and forming a p-channel device and an n-channel device, each of the p-channel device and the n-channel device comprising a source, a drain, and a gate, the p-channel device having a first sidewall spacer and the n-channel device having a second sidewall spacer. The method further includes forming a liner and forming a tensile stressor layer over the liner and removing a portion of the tensile stressor layer from a region overlying the p-channel device. The method further includes transferring a stress characteristic of an overlying portion of a remaining portion of the tensile stressor layer to a channel of the n-channel device. The method further includes using the remaining portion of the tensile stressor layer as a hard mask, forming a first recess and a second recess adjacent the gate of the p-channel device.

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