Method of making a semiconductor device of a high withstand volt

Details Method of making a semiconductor device of a high withstand volt Method of making a semiconductor device of a high withstand volt

1989-04-06

1992-10-20

Thomas, Tom

Fishing, trapping, and vermin destroying

437 82, 437247, H01L 4900

Patent

active

051569817

ABSTRACT:
Phosphorus is doped into one of the major surfaces of an n-type silicon semiconductor substrate, and boron is doped into the other major surface. Thereafter, the structure is diffused into the surface regions of the substrate at a high temperature and for a long time, so that an n-buffer layer is formed in the first major surface, and a p-base layer is formed in the second major surface. Impurity of n-type is diffused into the p-base layer, to form an n-emitter layer. Impurity of p-type is diffused into the n-buffer layer, to selectively form p-emitter layer. Further, n-type impurity is diffused into the n-buffer layer, to form n-type anode short layer.

REFERENCES:
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patent: 4537919 (1970-11-01), Bittmann
patent: 4551744 (1985-11-01), Suzulci
DESC Confrence Record pp. 903-907 Ogura et al. "Low Switching Loss, High Power Gate Turnoff Thyristors with N-Buffer and New Anode Short-Structure" Apr. 11-18, 1988.

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