Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-10-20
1999-03-09
Nguyen, Viet Q.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438598, 438424, 438621, 438430, 438637, H01L 2170
Patent
active
058800204
ABSTRACT:
A process of production of a semiconductor device comprising the steps of forming a first interlayer insulating film for covering a transistor formed on a substrate; forming a contact hole which will be connected to the transistor and a contact hole for local connection which will connect locations near each other simultaneously; and filling the contact holes with a conductor to form conductive plugs.
REFERENCES:
patent: 5057894 (1991-10-01), Ikeda et al.
patent: 5583070 (1996-12-01), Liao et al.
patent: 5650637 (1997-07-01), Kodaira et al.
patent: 5661063 (1997-08-01), Lee
Nguyen Viet Q.
Sony Corporation
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