Method of making a semiconductor device having an improved metal

Details Method of making a semiconductor device having an improved metal Method of making a semiconductor device having an improved metal

1990-12-24

1993-07-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437194, 437200, H01L 2144

Patent

active

052253724

ABSTRACT:
An improved semiconductor device interconnect comprising a conductive layer (30) with an underlying diffusion barrier metal (26) is attached to a doped glass layer (20) by an intermediate metal adhesion layer (22). The metal adhesion layer (22) is deposited onto the doped glass layer (30) prior to the formation of contact openings (24) in the doped glass layer (30) and the subsequent formation of the interconnect metallization. In one embodiment, a titanium diffusion barrier (26) is deposited onto a doped glass layer (30) having an aluminum metal adhesion layer (22) thereon and contact openings (24) therethrough. The titanium is annealed to form a silicide (28) in a substrate region (14) exposed by the contact opening (24) and an aluminum interconnect (32) is formed contacting the silicide region (28).

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