Method of making a semiconductor device having a silicide local

Details Method of making a semiconductor device having a silicide local Method of making a semiconductor device having a silicide local

1995-09-14

1997-06-03

Tsai, Jey

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438233, 438586, 438664, 438682, H01L 2128

Patent

active

056354266

ABSTRACT:
On a semiconductor substrate with an exposed silicon region, a metal layer such as Co is deposited and a silicide layer is formed by heat treatment. Thereafter, a metal layer such as Ni and a silicon layer are deposited, and one of them is patterned. The metal layer and silicon layer are heated for silicification to form a local interconnect. A semiconductor device manufacturing method is provided which uses salicide technique and can form a local interconnect of good quality.

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