Method of making a semiconductor device having a low K...

Details Method of making a semiconductor device having a low K... Method of making a semiconductor device having a low K...

2005-06-07

2005-06-07

Thai, Luan (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S623000, C438S622000, C438S625000, C438S626000, C438S627000, C438S628000, C438S629000

Reexamination Certificate

active

06903004

ABSTRACT:
A low K dielectric layer and a cap for the low K dielectric layer are formed in situ using the same silicon precursors but at different precursor ratios. The low K dielectric is deposited with precursors that are useful for making a low K dielectric. Trenches are formed in the low K dielectric and are filled by a metal layer. Chemical mechanical processing (CMP) is utilized to remove the metal outside the trench while the cap aids planarity outside the trench.

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