Method of making a semiconductor device having a flat surface

Details Method of making a semiconductor device having a flat surface Method of making a semiconductor device having a flat surface

1995-11-07

1999-08-31

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438646, 438698, 438253, H01L 214763

Patent

active

059465913

ABSTRACT:
A manufacturing method for semiconductor devices such as dynamic RAM, etc. which removes the layer part more on the high position than an arbitrary position on a step forming a gradation by just a prescribed thickness when flattening a layer with a gradation formed of a high position part and a low position part. Then the projecting part created after the etching existing more on the low position side than at the arbitrary position of the gradation is eliminated by heat treatment.

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patent: 5332687 (1994-07-01), Kuroda
Motorola Technical Developments, vol. 12, Apr. 1, 1991, pp. 59-64, XP000229266, Robinson F J: "Borophosphosilicte Glass Interlevel Dielectric Planarizatio n" *p. 59, col. 1, paragraph 4--p. 60, column 2, paragraph 2** figure 3*.

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