Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1997-07-23

2000-08-01

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438151, 438163, 438164, 438165, 438166, 438118, 438459, H01L 2100

Patent

active

060965827

ABSTRACT:
A method of making a semiconductor device is disclosed in which the device has an insulated gate transistor in which source and drain regions are provided in a single crystal semiconductor layer formed on an insulating layer with a channel region interposed between the source and drain regions. The insulating layers just below the source and drain regions are made thicker than an insulating layer just below the channel region. The method uses substrate bonding to achieve the device.

REFERENCES:
patent: 5324678 (1994-06-01), Kusunoki
patent: 5750000 (1998-05-01), Yonehara et al.
patent: 5780311 (1998-07-01), Beasom et al.
patent: 5840616 (1998-11-01), Sakaguchi et al.
Patent Abstracts of Japan, vol. 005, No. 082 (E-059), May 29, 1981 & JP 56 -20370 A (Nippon Telegr & Teleph Corp.), Mar. 24, 1981.
Patent Abstracts of Japan, vol. 010, No. 313 (E-448), Oct. 24, 1986 & JP 61 125 163 A (Agency of Ind Science & Technol), Jun. 12, 1986.

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