Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-09-20
1999-07-20
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438634, 438624, 438638, 438637, 438700, 438734, 438740, H01L 214763
Patent
active
059267321
ABSTRACT:
Disclosed herein is a method of making a semiconductor device, which can effectively prevent a lower insulating layer from formation of a recess resulting from etching during formation of a groove for connecting interconnection layers with each other. In this method of making a semiconductor device, a first etching prevention film is formed on a first interlayer insulating film, so that a second interlayer insulating film is formed on the first etching prevention film.
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Gurley Lynne A.
Mitsubishi Denki & Kabushiki Kaisha
Niebling John F.
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