Method of making a polysilicon carbon source/drain heterojunctio

Details Method of making a polysilicon carbon source/drain heterojunctio Method of making a polysilicon carbon source/drain heterojunctio

1996-12-31

1998-09-22

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438160, H01L 2100, H01L 2184

Patent

active

058113258

ABSTRACT:
The present invention includes forming a conductive layer on a substrate. Portions of the conductive layer are removed using a first photoresist layer as a mask. A first oxide layer is formed over the conductive layer and the substrate, and an amorphous silicon layer is then formed on the first oxide layer. After annealing the amorphous silicon layer, thereby transforming amorphous silicon layer to a polysilicon layer, a second oxide layer is formed on the polysilicon layer. The second oxide layer is removed using a second photoresist layer as a mask. An amorphous silicon carbon layer is formed over the second oxide layer and the polysilicon layer, and a heavily-doped amorphous silicon carbon layer is formed on the amorphous silicon carbon layer. After annealing the heavily-doped amorphous silicon carbon layer and the amorphous silicon carbon layer, thereby transforming the heavily-doped amorphous silicon carbon layer to a heavily-doped polysilicon carbon layer, and transforming the amorphous silicon carbon layer to a polysilicon carbon layer, portions of the polysilicon carbon layer, the heavily-doped polysilicon carbon layer and the polysilicon layer are removed using a third photoresist layer as a mask.

REFERENCES:
patent: 4889983 (1989-12-01), Numano et al.
patent: 5003356 (1991-03-01), Wakai et al.
patent: 5231297 (1993-07-01), Nakayama et al.
patent: 5311040 (1994-05-01), Hiramatsu et al.
patent: 5466617 (1995-11-01), Shannon
patent: 5621556 (1997-04-01), Fulks et al.

Affiliated with

Also associated with

Rating

Method of making a polysilicon carbon source/drain heterojunctio does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a polysilicon carbon source/drain heterojunctio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a polysilicon carbon source/drain heterojunctio will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1621425