Method of making a planar semiconductor on insulating substrate

Details Method of making a planar semiconductor on insulating substrate Method of making a planar semiconductor on insulating substrate

1979-01-29

1980-04-22

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148175, 156648, 156649, 156653, 156657, 357 4, 357 52, 357 54, 357 59, 427 85, 427 86, 427 93, 4272553, 4272557, H01L 21205, H01L 2184, H01L 2904

Patent

active

041993845

ABSTRACT:
A method of making a monolithic semiconductor-on-insulator device which includes silicon islands in spaced relation on the surface of an insulating substrate includes the steps of filling the spaces between the islands with a passivating material by first depositing a layer of a semi-insulating material on the surface of the substrate and extending between adjacent islands into contiguous relation with the side surfaces thereof and then depositing a layer of insulating material on the layer of semi-insulating material. The combined thicknesses of the layers of semi-insulating and insulating material is substantially the same as the thickness of the silicon islands so that the resulting device has a substantially planar surface.

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Capell et al., "Processing . . . C-MOS on Sapphire . . . ," Electronics, May 26, 1977, pp. 99-105.
Tarng, M. L., "Carrier Transport . . . Polycrystalline-Silicon Films," J. Appl. Phys., vol. 49 (7), Jul. 1978, pp. 4069-4075.
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