Method of making a pattern of tungsten interconnection

Details Method of making a pattern of tungsten interconnection Method of making a pattern of tungsten interconnection

1990-07-02

1991-12-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437193, 437233, 437228, 148DIG105, H01L 2144

Patent

active

050772368

ABSTRACT:
A method of making a pattern of tungsten interconnection comprising the step of: forming a polysilicon film (18) over a first insulating film (12) on a semiconductor substrate (11) and doping impurities; forming a high doped oxide film (19) over the polysilicon film and subsequently forming a metal interconnect pattern; growing selectively tungsten (15) on an exposed portion of the polysilicon film; stripping the high doped oxide film by wet etching and etching a residual (20) of the tungsten formed on the oxide film; and dry etching the polysilicon by using the tungsten on the polysilicon as a etching mask leaving only the polysilicon underneath the tungsten. The method can solve the troubles produced when the tungsten is used as metal interconnect material and improve the operation speed of the semiconductor devices with the interconnection of the tungsten metal, offering a reliability of the device for a long time operation.

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