Method of making a non-volatile memory having dielectric filled

Details Method of making a non-volatile memory having dielectric filled Method of making a non-volatile memory having dielectric filled

1986-03-27

1987-10-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG50, 156643, 156653, 156657, 437225, 437238, H01L 2170, H01L 2176

Patent

active

046989005

ABSTRACT:
A cross point EPROM array has trenches to provide improved isolation between adjacent buried N+ bitlines at locations where the adjacent buried N+ bitlines are not separated by a FAMOS transistor. This results in improved leakage current, improved punchthrough voltage characteristics, and in improved programmability for the cell.

REFERENCES:
patent: 4397076 (1983-08-01), Hanningford et al.
patent: 4612629 (1986-09-01), Harari

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