Method of making a multilayer interconnection of semiconductor d

Details Method of making a multilayer interconnection of semiconductor d Method of making a multilayer interconnection of semiconductor d

1997-04-01

1999-06-15

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438629, 438643, 438653, H01L 214763

Patent

active

059131438

ABSTRACT:
An inter-level insulating film is formed on a first Al film and a contact hole is formed to partly expose the first Al film. A TiW film is formed on the internal side surface of the contact hole and a W film is formed to form a conductive plug. After a TiN film and a second Al film are formed on the plug and inter-level insulating film, a resist mask used for etching the above films is formed in position corresponding to the plug. By use of this plug, the second Al film and TiN film are removed by RIE using Cl-series gas. Since the selective etching ratio of TiW film/Ti film is approx. 0.2, etching of the TiW film in the plug can be suppressed even if the mask is formed in position deviated from the upper portion of the plug. Therefore, after formation of the insulating film, occurrence of void can be prevented, thereby enhancing the reliability and service life of the interconnection structure.

REFERENCES:
patent: 5393703 (1995-02-01), Olowolafe et al.
patent: 5472912 (1995-12-01), Miller
patent: 5747379 (1998-05-01), Huang et al.

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