Method of making a multi-layer wiring structure having conductiv

Details Method of making a multi-layer wiring structure having conductiv Method of making a multi-layer wiring structure having conductiv

1996-05-06

1998-05-26

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438625, 438627, 438637, 438648, H01L 214763

Patent

active

057563969

ABSTRACT:
The present invention provides a structure and a method of electrically connecting wiring layers by forming a stacked plug interconnect. The first wiring layer is formed over a dielectric layer and a top barrier layer is formed over the top of the first wire layer. Next, first sidewall spacers preferably composed of titanium nitride and tungsten are formed on the first wire layer sidewalls. An inter metal dielectric layer is formed over the surface. A via is then etched exposing the first wiring layer. The first titanium nitride/tungsten spacers act as an etch stop for the via etch and also increase the contact area of the wiring layers. A tungsten plug with an outer TiN barrier layer is formed filling the via contacting the first wiring layer. On top of the tungsten plug, a second wiring layer is formed also having titanium nitride and tungsten sidewall spacers. The spacers also fill in the recesses in the TiN plug barrier layer and fill in dimples in the top of the tungsten plugs.

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