Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-05-24
1997-09-02
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
427 96, 4272553, 427259, 257522, 257728, 257735, 216 14, H01L 2144
Patent
active
056630956
ABSTRACT:
A micro-dimensional coupling conductor with a shape that is customized for a particular electronic device. A fabrication method is used in which the physical dimensions of the conductor are precisely controlled with photolithographic techniques, resulting in a conductor that is more precisely tuned to the operating frequency of the device. The conductor is fabricated on an SiO.sub.2 substrate using vacuum deposition or electroplating techniques. After fabrication, the conductor is separated from the SiO.sub.2 substrate by dissolving the SiO.sub.2. Alternatively, the conductor may be fabricated on a Teflon.TM. substrate. The use of a Teflon substrate allows a user to remove the conductor from the substrate by applying a small mechanical force to the conductor.
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D. V. Morgan and K. Board, An Introduction to Semiconductor Microtechnology (Second Editional), John Wiley & Sons, Chichester (1990), pp. 111-114.
Denson-Low W. K.
Duraiswamy V. D.
Hughes Aircraft Company
Niebling John
Turner Kevin
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