Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1995-04-03
1998-01-20
Chapman, Mark
Etching a substrate: processes
Etching of semiconductor material to produce an article...
310309, 310323, 310328, 33 1M, 33568, 33573, 29 2535, B23Q 1600, H02N 200
Patent
active
057098026
ABSTRACT:
A method of fabricating a semiconductor integrated microactuator device that includes the steps of: bonding or laminating a driving element to a substrate for generating a vertical motion, and coupling a conversion element to the driving element for converting the vertical motion into rotational motion. The method can be effectively used for micro-actuators that utilize Coulomb's force, vibration, and fluid pressure as their driving force.
REFERENCES:
H. Seidel, et al., "Capacitive Silicon Accelerometer with Highly Symmetrical Design", Transducert '89 Lecture no. B10.4, Jun. 1989.
K. Ikeda, et al., "Silicon Pressure Sensor Integrates Resonant Strain Gauge on Diaphragm", Transducers '89 Lecture No. B4.3, Jun. 1989.
Furuhata Tomotake
Hirano Toshiki
Chapman Mark
International Business Machines - Corporation
Schnurmann H. Daniel
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