Method of making a MEMS device containing a cavity with...

Details Method of making a MEMS device containing a cavity with... Method of making a MEMS device containing a cavity with...

2005-09-16

2008-10-21

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S050000, C438S052000, C438S712000, C438S739000

Reexamination Certificate

active

07439093

ABSTRACT:
A method of making an etch structure in a substrate involves the steps of providing a mask on a substrate with a pattern that leaves at least one opening leaving the substrate in direct contact with the ambient, performing an isotropic or quasi-isotropic etch through a mask to create a cavity under the mask, which mask is left behind as a suspended membrane above the cavity; and performing a subsequent anisotropic etch that etches anisotropically the pattern of the mask in the bottom of the cavity.

REFERENCES:
patent: 5501893 (1996-03-01), Laermer et al.
patent: 6127273 (2000-10-01), Laermer et al.
patent: 6500348 (2002-12-01), Chase et al.
patent: 6685844 (2004-02-01), Rich et al.
patent: 6767614 (2004-07-01), Hofmann et al.
patent: 2002/0179246 (2002-12-01), Garabedian et al.
patent: 2003/0210799 (2003-11-01), Gabriel et al.
patent: 2005/0009226 (2005-01-01), Kumagai et al.
patent: 1441561 (2004-07-01), None
patent: 1529753 (2005-05-01), None

Affiliated with

Also associated with

Rating

Method of making a MEMS device containing a cavity with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a MEMS device containing a cavity with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a MEMS device containing a cavity with... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3999869