Method of making a magnetoresistive sensor

Details Method of making a magnetoresistive sensor Method of making a magnetoresistive sensor

1995-04-13

1996-09-10

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

2041923, 427130, 427131, 216 22, C23C 1434, G11B 542, B05D 512

Patent

active

055542654

ABSTRACT:
An MR sensor having improved current density distribution, reduced overall resistance and a substantially planar surface is disclosed. The MR sensor includes an MR layer having first and second outer regions and an active region located between the first and second outer regions. A first permanent magnet region is formed upon the first MR layer outer region and defines a first boundary of the MR layer active region. A second permanent magnet region is formed upon the second MR layer outer region and defines a second boundary of the MR layer active region so that a gap region is positioned at least partially between the first and second permanent magnet regions. A spacer layer is formed on the MR layer active region between the first and second permanent magnet regions. A soft adjacent layer is formed in the active region and upon the spacer layer, and, in some preferred embodiments, also at least partially upon the permanent magnet region.

REFERENCES:
patent: 4470873 (1984-11-01), Nakamura
patent: 5079035 (1992-01-01), Krounbi et al.
patent: 5262914 (1993-11-01), Chen et al.
patent: 5458908 (1995-10-01), Krounbi et al.

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