Method of making a magnetic tunnel junction device

Details Method of making a magnetic tunnel junction device Method of making a magnetic tunnel junction device

2006-02-14

2006-02-14

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C257S427000

Reexamination Certificate

active

06998662

ABSTRACT:
A method of making a magnetic tunnel junction device is disclosed. The magnetic tunnel junction device includes a magnetic tunnel junction stack and an electrically non-conductive spacer in contact with a portion of the magnetic tunnel junction stack. The spacer electrically insulates a portion of the magnetic tunnel junction stack from an electrically conductive material used for a via that is in contact with the magnetic tunnel junction stack and a top conductor. The spacer can also prevent an electrical short between a bottom conductor and the top conductor. The spacer can prevent electrical shorts when the magnetic tunnel junction stack and a self-aligned via are not aligned with each other.

REFERENCES:
patent: 5841692 (1998-11-01), Gallagher et al.
patent: 6475857 (2002-11-01), Kim et al.

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