Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Plural fluid growth steps with intervening diverse operation
Patent
1997-05-08
1999-08-10
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Plural fluid growth steps with intervening diverse operation
438931, 117 98, H01L 2120
Patent
active
059373172
ABSTRACT:
A nitrogen doped single crystal silicon carbide boule is grown by the physical vapor transport process by introducing nitrogen gas into the growth furnace. During the growth process the pressure within the furnace is maintained at a constant value, P.sub.o, where P.sub.o .ltoreq.100 Torr. This is accomplished by measuring the pressure within the furnace and providing the pressure measurement to a process controller which regulates the nitrogen introduction as nitrogen gas is incorporated into the crystal structure. The partial pressure of the nitrogen may be selected to be at a value between 1 and P.sub.o. If the desired partial pressure is less than P.sub.o, an inert gas is added to make up the difference.
REFERENCES:
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patent: 5433167 (1995-07-01), Furukawa et al.
Lilov et al., "Investigation of nitrogen solubility process in silicon carbide," Kristall un Tecknik, vol. 14, No. 1, pp. 111-116 (no month given), 1979.
Barrett et al., "SiC boule growth by sublimation vapor transport", Journal of Crystal Growth, vol. 109, pp. 17-23 (no month given), 1991.
Barrett et al., "Growth of large SiC single crystals", Journal of Crystal Growth, vol. 128, pp. 358-362 (no month given), 1993.
Tsvetkov et al., "Recent progress in SiC crystal growth", Inst. Phys. Conf. Ser. No. 142, Chapter 1, pp. 17-22 (no month given), 1995.
Barrett Donovan L.
Hobgood Hudson McDonald
Hopkins Richard H.
McHugh James P.
Bowers Charles
Christianson Keith
Northrop Grumman Corporation
Sutcliff Walter G.
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