Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1999-01-12
2000-05-09
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438 23, 438 82, 438 99, 438149, 438151, 438157, H01L 3524
Patent
active
06060333&
ABSTRACT:
A method of fabricating a liquid crystal display device including a field effect transistor includes forming a gate electrode on an electrically insulating substrate, the gate electrode being located in a transistor region of the substrate; forming an electrically insulating film on the substrate and covering the gate electrode; forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode in the transistor region; forming a display electrode on the electrically insulating substrate in a display region of the substrate, adjacent the transistor region, the drain electrode being electrically connected to the display electrode; and forming, in the transistor region, a semiconductor film of a .pi.-conjugated polymer on the source and drain electrodes and on the electrically insulating film between the source and drain electrodes in the transistor region; arranging a transparent plate, including a transparent electrode, opposite and spaced from the .pi.-conjugated polymer film and the display electrode with the transparent electrode opposite the display electrode; and injecting a liquid crystal material between the transparent and display electrodes and between the transparent plate and the .pi.-conjugated polymer film.
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Doi Syuji
Fuchigami Hiroyuki
Koezuka Hiroshi
Tanaka Toshihiko
Tsumura Akira
Guerrero Maria
Jr. Carl Whitehead
Mitsubishi Denki & Kabushiki Kaisha
Sumitomo Chemical Company Ltd.
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