Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-01-14
2000-09-26
Fourson, George
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257386, 257444, H01L 27146
Patent
active
061246069
ABSTRACT:
This invention is related to a radiation imager (e.g. x-ray imager) and method of making same. An insulating material having a low dielectric constant is provided in areas of overlap between collector electrodes and underlying TFTs, diodes, and/or address lines in order to improve the signal-to-noise ratio of the imager. The TFT array and corresponding imager are made in certain embodiments by coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing storage capacitor collecting electrodes over the insulating layer so that the collecting electrodes contact TFT source electrodes through the contact vias. The resulting imager has an improved signal-to-noise ratio due to the low dielectric constant of the insulating layer.
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Aggas Steven
Boer Willem den
Byun Young H.
Gu Tieer
Zhong John Z. Z.
Fourson George
OIS Optical Imaging Systems, Inc.
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