Method of making a hyperabrupt varactor diode utilizing molecula

Details Method of making a hyperabrupt varactor diode utilizing molecula Method of making a hyperabrupt varactor diode utilizing molecula

1979-03-16

1980-10-07

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 148 15, 148187, 357 13, 357 14, 357 58, 357 89, 357 90, H01L 21203, H01L 2122

Patent

active

042266483

ABSTRACT:
A semiconductor varactor diode of the hyperabrupt junction type, typically having a PNN+ configuration, is disclosed. The impurity concentration in the intermediate N-type portion is grown in by the molecular beam epitaxy process to provide the hyperabrupt profile. Also, the N-type background doping in the P-type zone is minimized by the same epitaxial process to reduce the level of impurity compensation needed.

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