Method of making a floating gate non-volatile MOS...

Details Method of making a floating gate non-volatile MOS... Method of making a floating gate non-volatile MOS...

2011-08-30

2011-08-30

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000, C257SE29112, C257SE29129, C257SE29135

Reexamination Certificate

active

08008701

ABSTRACT:
A method of making a non-volatile MOS semiconductor memory device includes a formation phase, in a semiconductor material substrate, of isolation regions filled by field oxide and of memory cells separated each other by said isolation regions The memory cells include an electrically active region surmounted by a gate electrode electrically isolated from the semiconductor material substrate by a first dielectric layer; the gate electrode includes a floating gate defined simultaneously to the active electrically region. A formation phase of said floating gate exhibiting a substantially saddle shape including a concavity is proposed.

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