Method of making a field emitter device using randomly located n

Details Method of making a field emitter device using randomly located n Method of making a field emitter device using randomly located n

1993-04-23

1994-05-17

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156647, 156655, 156656, 1566591, 2041921, 20419215, 4272481, 427249, 427250, 427255, 427256, 445 51, H01J 900

Patent

active

053125142

ABSTRACT:
Method of making a field emitter device with submicron low work function emission tips without using photolithography. The method includes depositing in situ by evaporating or sputtering a discontinuous etch mask comprising randomly located discrete nuclei. In one embodiment an ion etch is applied to a low work function material covered by a discontinuous mask to form valleys in the low work function material with pyramid shaped emission tips therebetween. In another embodiment an ion etch is applied to an electrically conductive base material covered by a discontinuous mask to form valleys in the base material with pyramid shaped base tips therebetween. The base material is then coated with a low work function material to form emission tips thereon.

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