Method of making a diode read/write memory cell in a...

Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state

Reexamination Certificate

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C438S128000, C438S130000, C438S328000, C438S467000, C365S105000, C257SE27020, C257S296000

Reexamination Certificate

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07618850

ABSTRACT:
A method of making a nonvolatile memory device includes fabricating a diode in a low resistivity, programmed state without an electrical programming step. The memory device includes at least one memory cell. The memory cell is constituted by the diode and electrically conductive electrodes contacting the diode.

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