Method of making a device having a heteroepitaxial substrate

Details Method of making a device having a heteroepitaxial substrate Method of making a device having a heteroepitaxial substrate

1996-03-21

1998-11-10

Dutton, Brian

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with subsequent...

438172, 438312, 438571, H01L 21338, H01L 21331, H01L 2120, H01L 2136

Patent

active

058343628

ABSTRACT:
A method for fabricating a compound semiconductor device includes the steps of depositing a first group III-V compound semiconductor layer on a surface of a Si substrate while holding a temperature of the Si substrate at a first temperature, depositing a second group III-V compound semiconductor layer on the first group III-V compound semiconductor layer while holding the temperature of the substrate at a second, higher temperature, and depositing a third group III-V compound semiconductor layer on the second group III-V compound semiconductor layer while holding the temperature of the substrate at a third temperature higher than said second temperature, wherein the second group III-V compound semiconductor layer contains Al.

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patent: 5391515 (1995-02-01), Kao et al.
patent: 5492860 (1996-02-01), Ohkubo et al.
patent: 5569953 (1996-10-01), Kikkawa et al.

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