Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-09-17
2000-03-14
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438622, 438625, 438637, 438638, 438666, 438668, 438672, H01L 214763
Patent
active
06037246&
ABSTRACT:
Electrical shorts and leakage paths are virtually eliminated by recessing conductive nodules (52) away from a conductor (72) or not forming the conductive nodules at all. In one embodiment, the refractory metal containing material (52) is recessed from the edge of the opening (32). When forming a nitride layer (54) within the opening (32), conductive nodules (52) are formed from a portion of the refractory metal containing material (20) such that the conductive modules (52) lie within the recession (42). In another embodiment, an oxide layer (82, 102) is formed adjacent to the refractory metal containing material (20) before forming a nitride layer (84, 112).
REFERENCES:
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 4977105 (1990-12-01), Okamoto et al.
patent: 5204286 (1993-04-01), Doan
patent: 5262352 (1993-11-01), Woo et al.
patent: 5627395 (1997-05-01), Witek et al.
T.C.Chou et al, "Solid state interfacial reactions of Ti3Al with Si3N4 and SiC", 1992 Materials Research Society, J.Mater. Res., vol. 7, No. 5, May 1992, pp. 1253-1265.
J.C.Barbour et al., "Thin-film reaction between Ti and Si3N4", 1987 American Institute of Physics Applied Physics, Lett. 50 (15), Apr. 13, 1987, pp. 953-955.
T.P.Thorpe,et al., "Electrical and optical properties of Sputtered TiNx films as a function of . . . ", 1986 American Institute of Physics, Appl. Phys. Lett 49 (19), Nov. 10, 1986,pp. 1239-1241.
Bhat Mousumi
Hall Mark D.
Sitaram Arkalgud R.
Woo Michael P.
Gariazzo Joanna P.
Gurley Lynn A.
Meyer George R.
Motorola Inc.
Niebling John F.
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